RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays

Introduction This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a 10MHz to 600MHz wideband feedback amplifier are described. The HFA3046, HFA3096, HFA3127, HFA3128 transistor arrays are fabricated in a complementary bipolar bonded wafer silicon-on-insulator (SOI) technology, dubbed UHF-1 [1]. All four products make use of the same die, which has both NPN and PNP transistors on it. Figure 1 shows the pinouts of the four different products. Typical NPN and PNP transistor characteristics are shown in Table 1.